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| 2SC2062S Transistors High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S Features 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. Absolute maximum ratings (Ta=25C) C 5.0 (1) (2) (3) External dimensions (Unit : mm) SPT 4.0 2.0 3.0 (15Min.) 3Min. 0.45 2.5 0.5 0.45 (1)Emitter (2)Collector B Taping specifications (3)Base E : Emitter C : Collector B : Base E Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 40 32 12 0.3 0.3 150 -55 to +150 Unit V V V A W C C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Symbol BVCBO BVCES BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 12 - - 10000 - - - Typ. - - - - - - - 200 2.5 Max. - - - 0.1 0.1 - 1.4 - - Unit V V V A A - V MHz pF IC=100A IC=10mA IE=100A VCB=30V VEB=12V VCE/IC=3V/0.1A IC/IB=200mA/0.2mA VCE=5V , IE= -10mA , f=100MHz VCB=10V , IE=0A , f=1MHz Conditions Transition frequency Output capacitance Transition frequency of the device. Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC2062S SPT C TP 5000 Rev.A 1/2 2SA1759 Transistors Electrical characteristics curves COLLECTOR CURRENT : Ic (mA) BASE EMITTER VOLTAGE : VBE(on) (V) 500 Ta=25C 16 18 20 COLLECTOR CURRENT : Ic (mA) 100 Ta=25C 80 2.4 2.0 1.8 1.6 1.2 2.2 Ta=25C 2.0 VCE=5V 400 14 12 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 2.0 5.0 10 20 50 100 200 500 1000 300 10 8.0 60 200 6.0 4.0 40 0.8 100 2.0 IB=0A 20 0.4 0.2 IB=0A 0 0 0 1.0 2.0 0 1.0 2.0 3.0 4.0 5.0 COLLECTOR - EMITTER VOLTAGE : VCE (V) COLLECTOR - EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Typical output characteristics ( ) Fig.2 Typical output characteristics ( ) Fig.3 Base emitter 'ON' voltage vs. collector current COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) 100k 50k VCE=10V DC CURRENT GAIN : hFE Ta=25C 100k Ta=25C VCE=5V 50k Ta=25C DC CURRENT GAIN : hFE 1.8 Ta=25C 1.6 IC/IB=1000 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 20k 10k 5k 5V 3V 20k 10k 5k Ta=-55C 2k 1k 0.1 0.2 2k 1k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector emitter saturation voltage vs. collector current CURRENT GAIN-BANDWIDTH PRODUCT (MHz) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 2.2 Ta=25C IC/IB=1000 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) 1000 Ta=25C VCE=5V 500 100 Ta=25C f=1MHz 50 CAPACITANCE (pF) 200 100 50 20 10 5 Cib Cob 20 10 1.0 2 1 0.5 2.0 5.0 10 20 50 100 200 500 1000 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) REVERSE BIAS VOLTAGE (V) Fig.7 Base emitter saturation voltage vs. collector current Fig.8 Current gain-bandwidth product vs. collector current Fig.9 Capacitance vs. reverse bias voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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